ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT

被引：27

作者：

LIN, GR ^{[1
]}

CHEN, WC ^{[1
]}

CHANG, CS ^{[1
]}

PAN, CL ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTROOPT ENGN,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 25期

关键词：

D O I：

10.1063/1.112434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of an amorphous GaAs film by implanting dense arsenic ions into semi-insulating GaAs substrate have been studied. The specific contact resistance of the sample at room temperature is found to be 1.1×10 -1 Ω cm2. This indicates that the conduction-band electron concentration is less than 1013 cm-3. The activation energy at temperature above 360 K and the density of states are, respectively, 0.6 eV and 1027 m-3 eV-1 as estimated from the slope of Arrhenius plot. Fitting of the Arrhenius plot also suggests that the carrier transport at metal/semiconductor junction of this material below 360 K is dominated by the variable-range hopping conduction mechanism which depends on deep level defects. © 1994 American Institute of Physics.

引用

页码：3272 / 3274

页数：3

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