NATIVE DONORS AND ACCEPTORS IN MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 200-DEGREES-C

被引:54
作者
LOOK, DC
WALTERS, DC
MIER, M
STUTZ, CE
BRIERLEY, SK
机构
[1] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
[2] RAYTHEON CORP,DIV RES,LEXINGTON,MA 02173
关键词
D O I
10.1063/1.106813
中图分类号
O59 [应用物理学];
学科分类号
摘要
Absorption measurements at 1.1 and 1.2-mu-m were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2-like) and acceptor concentrations N(D)=9.9X10(19) and N(A)=7.9X10(18) cm-3, respectively, in a 2-mu-m-thick molecular-beam epitaxial GaAs layer grown at 200-degrees-C on a 2-in.-diam semi-insulating wafer. Both lateral and depth uniformities of N(D) over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.
引用
收藏
页码:2900 / 2902
页数:3
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