FULL-WAFER MAPPING OF TOTAL AND IONIZED EL2 CONCENTRATION IN SEMI-INSULATING GAAS USING INFRARED-ABSORPTION

被引：19

作者：

BRIERLEY, SK

LEHR, DS

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期

关键词：

D O I：

10.1063/1.102015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2426 / 2428

页数：3

共 15 条

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[2]

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[3]

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[8] COMPENSATION MECHANISMS IN GAAS [J].

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[9] HOLE PHOTOIONIZATION CROSS-SECTIONS OF EL2 IN GAAS [J].

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[10]

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