OHMIC CONTACT FORMATION ON GAAS-LAYERS WITH LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL CAPS

被引：4

作者：

LOOK, DC ^{[1
]}

YAMAMOTO, H ^{[1
]}

NAKANO, K ^{[1
]}

机构：

[1] WRIGHT LAB,ERL,WRIGHT PATTERSON AFB,OH 45433

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 05期

关键词：

D O I：

10.1109/16.129112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular-beam epitaxial GaAs layers, grown at 200 or 400-degrees-C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n congruent-to 1.6 x 10(17) cm-3) grown at normal temperatures (580-600-degrees-C). Here we show that ohmic contacts, with specific contact resistances of 10(-6) OMEGA.cm2, are easily fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p congruent-to 1.5 x 10(17) cm-3) suggest that a 200-degrees cap may degrade the contact resistance by a factor of 3-10.

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收藏

页码：1237 / 1239

页数：3

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