NONALLOYED OHMIC CONTACTS ON LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL GAAS - INFLUENCE OF DEEP DONOR BAND

被引：59

作者：

YAMAMOTO, H ^{[1
]}

FANG, ZQ ^{[1
]}

LOOK, DC ^{[1
]}

机构：

[1] WRIGHT STATE UNIV,DEPT PHYS,DAYTON,OH 45435

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200°C was studied. The specific contact resistances at room temperature and 120 K were 1.5×10-3 and 7.0×10-1 Ω cm2, respectively. These values are anomalously low considering that the conduction-band electron concentration in this material is less than 1011 cm-3 at room temperature. The experimental results indicate that the carrier transport at the metal/semiconductor interface is dominated by a dense (∼3×10 19 cm-3) EL2-like deep donor band, rather than the usual conduction band.

引用

页码：1537 / 1539

页数：3

共 13 条

[1] ORIGIN AND EFFECTS OF CARBON IN LOW-PRESSURE LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].