HALL-EFFECT DEPLETION CORRECTIONS IN ION-IMPLANTED SAMPLES - SI-29 IN GAAS

被引：6

作者：

LOOK, DC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.344250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2420 / 2424

页数：5

共 9 条

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