ELECTRICAL ACTIVATION OF IMPLANTED BE, MG, ZN, AND CD IN GAAS BY RAPID THERMAL ANNEALING

被引：19

作者：

PEARTON, SJ

CUMMINGS, KD

VELLACOLEIRO, GP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.335782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3252 / 3254

页数：3

共 13 条

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[8]

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[9]

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LUI SG, 1984, J ELECTRON MATER, V13, P897

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