ELLIPSOMETRIC DETERMINATION OF THE THICKNESS AND REFRACTIVE-INDEX OF SILICON FILMS

被引：6

作者：

LI, M

YAKOVLEV, VA

WALL, J

IRENE, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ellipsometric method is demonstrated to measure film thickness and the complex index of refraction for Si films using infrared and visible light single wavelength ellipsometry. Errors are considered and optical models are recommended for different wavelength ranges using results from spectroscopic ellipsometry and atomic force microscopy.

引用

页码：2102 / 2106

页数：5

共 17 条

[1]

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[2]

Aspnes D. E., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V276, P188

[3]

Azzam R. M. A., 1977, ELLIPSOMETRY POLARIZ

[4] OPTICAL-PROPERTIES OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON OVER THE ENERGY-RANGE 3.0-EV-6.0-EV [J].