MULTIWAVELENGTH LASER ARRAY BY CHEMICAL BEAM EPITAXY ON PATTERNED INP SUBSTRATES

被引：7

作者：

KAPRE, RM

TSANG, WT

CHEN, YK

SERGENT, AM

机构：

[1] AT&T Bell Laboratories, Murray Hill, NJ 07974

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 09期

关键词：

SEMICONDUCTOR LASERS; EPITAXY AND EPITAXIAL GROWTH; LASERS;

D O I：

10.1049/el:19930511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multiwavelength laser array has been obtained through growth on patterned InP substrates using chemical beam epitaxy. This technique makes use of interfacet migration of reactant species to obtained compositional and/or thickness variation with position on a set of patterned ridges. Results obtained on [100] InP substrates with prepatterned ridges of various sizes oriented in the [011BAR] direction are presented A variation in lasing wavelength from 1560 to 1582 nm is obtained from lasers processed on ridges with different sizes.

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页码：763 / 765

页数：3

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