FACET GROWTH OF INP/INGAAS LAYERS ON SIO2-MASKED INP BY CHEMICAL BEAM EPITAXY

Selective area growth of periodic InP/InGaAs heterostructure layers by chemical beam epitaxy are studied. The layers are grown in windows ranging in width from 0.1 to 5-mu-m under various substrate temperature and mask stripe direction conditions. Mesa-like structures bounded by a (100) top surface and two (111)B sidewalls are selectively grown for InP and InGaAs. An analysis of the time evolution of the mesa cross-section areas reveals that 100% of the metalorganic molecules impinging on the (111)B planes migrate to the (100) plane in InP facet growth, while only 40% of them migrate in InGaAs growth. Cathodoluminescence measurement indicates that the peak wavelengths of the selectively grown InGaAs/InP superlattice shift to longer wavelength as the stripe window width decreases. A 450 angstrom wide InGaAs quantum wire is buried in InP layers in a single growth step. A simple model explaining the facet growth mechanism is also proposed.