JUNCTION MIGRATION IN PBTE-PBSNTE HETEROSTRUCTURES

被引：10

作者：

EGEL, D

ZEMEL, A

ROTTER, S

TAMARI, N

ORON, M

ZUSSMAN, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 01期

关键词：

D O I：

10.1063/1.329815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：490 / 495

页数：6

共 17 条

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[4]

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[6]

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APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&

[8] PBTE AND PB0.8SN0.2TE EPITAXIAL-FILMS ON CLEAVED BAF2 SUBSTRATES PREPARED BY A MODIFIED HOT-WALL TECHNIQUE [J].

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[9] NON-SEEDED GROWTH OF LARGE SINGLE PB1-XSNXTE CRYSTALS ON A QUARTZ SURFACE [J].

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[10] LIQUID-PHASE EPITAXIAL-GROWTH OF LASER HETEROSTRUCTURES IN PB1-X SNXTE [J].

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FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1974, 24 (11) :567-570

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