EXPERIMENTAL-ANALYSIS OF HIGH-ENERGY BORON IMPLANTATION IN SILICON

被引：6

作者：

LAFERLA, A

RIMINI, E

CARNERA, A

GASPAROTTO, A

CIAVOLA, G

FERLA, G

机构：

[1] DIPARTIMENTO FIS,I-35131 PADUA,ITALY

[2] LAB NAZL,I-95100 CATANIA,ITALY

[3] SGS THOMSON,I-95100 CATANIA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1994年 / 129卷 / 3-4期

关键词：

SILICON; BORON; IMPLANTATION; HIGH ENERGY; SPREADING RESISTANCE; SIMS;

D O I：

10.1080/10420159408229011

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Boron ions in the 15-50 MeV energy range were implanted into high resistivity silicon targets. The range distributions were measured by Spreading Resistance Profilometry (SRP) and for the first time by Secondary Ion Mass Spectrometry (SIMS). The two techniques provide accurate range and straggling experimental determinations even at this large depth (approximately 100 mum). The carrier profile matches quite well the chemical profile in all the investigated samples. The profiles are characterized by a long front tail at low boron concentration due to single scattering events at large angle. The distribution around the peak is broaded by electronic straggling and in some cases by channeling effects. This latter phenomenon introduces an asymmetry around the peak. The Bethe approach in combination with large angle scattering and electronic straggling describes the profiles.

引用

页码：133 / 139

页数：7

共 12 条

[1] RANGE CALCULATIONS AT HIGH ION ENERGY .1. [J].

BARDOS, G .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1988, 105 (3-4) :191-201

[2]

Bethe H, 1930, ANN PHYS-BERLIN, V5, P325

[3] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[4]

BIERSACK JP, COMMUNICATION

[5]

BYRNE PF, 1983, THIN SOLID FILMS, V95, P363

[6]

CHOO SC, 1977, SOLID STATE ELECTRON, V20, P460

[7] FEEDING-IN AND BLOCKING PROCESSES OF MEV PROTONS TRANSMITTED THROUGH SILICON SINGLE-CRYSTALS [J].

DELLAMEA, G ;

DRIGO, AV ;

LORUSSO, S ;

MAZZOLDI, P ;

BENTINI, GG ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :163-167

[8]

FAHRNER WR, 1984, ASTM STP, V850, P77

[9] IMPLANTS OF 15-50-MEV BORON IONS INTO SILICON [J].

LAFERLA, A ;

DIFRANCO, A ;

RIMINI, E ;

CIAVOLA, G ;

FERLA, G .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (1-3) :69-73

[10] VERY HIGH-ENERGY IMPLANTS OF BORON INTO SILICON [J].

LAFERLA, A ;

RIMINI, E ;

CIAVOLA, G ;

FERLA, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 :951-954

← 1 2 →