NEW ADVANCES IN SEMICONDUCTOR IMPLANTATION

The objective of this review is to illustrate with some selected topics the advances made by ion implantation in modifying semiconductor materials, particularly silicon. The progress in obtaining extremely shallow impurity distributions, either by direct implants or by recoil methods, has led not only to better insights into the stopping phenomena of energetic particles in the low-energy range, but also to the capability of developing advanced Schottky barrier diodes. The application of radiation damage for gettering purposes is discussed in combination with the marked increase in the pipe-limited yield of bipolar devices. Another topic related to the generation of defects during implantation is the radiation-enhanced diffusion. Recent studies and advances in the understanding of these phenomena are presented.