LUMINESCENCE AND RAMAN MEASUREMENTS OF INYGA1-YP (0.3-LESS-THAN-Y-LESS-THAN-0.5) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：30

作者：

ZACHAU, M ^{[1
]}

MASSELINK, WT ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期

关键词：

D O I：

10.1063/1.107101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the luminescence, luminescence excitation, and Raman spectra of undoped In(y)Ga(1-y)P (0.3 < y < 0.5) films grown by gas-source molecular beam epitaxy on GaAs substrates. We observe strong excitonic luminescence over the entire composition range investigated. The band gap derived from the luminescence excitation spectra corresponds to that of a fully relaxed InGaP film with no residual strain, which is confirmed by the Raman measurements. The dependencies of the Raman modes on alloy composition and ordering effects are discussed.

引用

页码：2098 / 2100

页数：3

共 15 条

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