RAMAN SPECTRAL BEHAVIOR OF IN1-XGAXP (0-LESS-THAN-1)

[1] DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1968, 165 (03): : 917 - &

[2] RAMAN DETECTION OF PHONON-PHONON COUPLING IN GAXIN1-XP [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (05) : 485 - 488

[3] BESERMAN R, 1976, 13TH P INT C PHYS SE, P1290

[4] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1926 - &

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373

[6] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028

[7] LONG-WAVELENGTH LATTICE-DYNAMICS OF IN1-XGAXASYP1-Y ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) : 2056 - 2064

[8] EVIDENCE BY RAMAN-SCATTERING ON IN1-XGAXASYP1-Y OF THE 2-MODE BEHAVIOR OF IN1-XGAXP [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (01) : 95 - 98

[9] INFLUENCE OF LATTICE MISMATCH ON PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL GROWN INGAP ON GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 728 - 734

[10] STRAIN-INDUCED SHIFT OF OPTICAL PHONON FREQUENCY IN INGAP LAYERS GROWN ON GAAS SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1597 - L1600

[1] DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1968, 165 (03): : 917 - &

[2] RAMAN DETECTION OF PHONON-PHONON COUPLING IN GAXIN1-XP [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (05) : 485 - 488

[3] BESERMAN R, 1976, 13TH P INT C PHYS SE, P1290

[4] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1926 - &

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373

[6] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028

[7] LONG-WAVELENGTH LATTICE-DYNAMICS OF IN1-XGAXASYP1-Y ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) : 2056 - 2064

[8] EVIDENCE BY RAMAN-SCATTERING ON IN1-XGAXASYP1-Y OF THE 2-MODE BEHAVIOR OF IN1-XGAXP [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (01) : 95 - 98

[9] INFLUENCE OF LATTICE MISMATCH ON PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL GROWN INGAP ON GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 728 - 734

[10] STRAIN-INDUCED SHIFT OF OPTICAL PHONON FREQUENCY IN INGAP LAYERS GROWN ON GAAS SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1597 - L1600