QUANTUM INTERFERENCE EFFECTS IN GAAS GAALAS BULK POTENTIAL BARRIERS

[1] ALLYN CA, 1980, APPL PHYS LETT, V36, P377

[2] ZUR BERECHNUNG DES TUNNELSTROMS DURCH EINE TRAPEZFORMIGE POTENTIALSTUFE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 949 - &

[3] HOT-ELECTRON SPECTROSCOPY [J]. ELECTRONICS LETTERS, 1984, 20 (21) : 851 - 852

[4] HOT-ELECTRON SPECTROSCOPY OF GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (14) : 1570 - 1572

[5] HICKMONT TW, 1983, APPL PHYS LETT, V44, P90

[6] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2071 - 2073

[7] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837

[8] TUNNELING IN THIN MOS STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 996 - 1003

[9] MAJORITY-CARRIER CAMEL DIODE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 63 - 65

[1] ALLYN CA, 1980, APPL PHYS LETT, V36, P377

[2] ZUR BERECHNUNG DES TUNNELSTROMS DURCH EINE TRAPEZFORMIGE POTENTIALSTUFE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 949 - &

[3] HOT-ELECTRON SPECTROSCOPY [J]. ELECTRONICS LETTERS, 1984, 20 (21) : 851 - 852

[4] HOT-ELECTRON SPECTROSCOPY OF GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (14) : 1570 - 1572

[5] HICKMONT TW, 1983, APPL PHYS LETT, V44, P90

[6] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2071 - 2073

[7] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837

[8] TUNNELING IN THIN MOS STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 996 - 1003

[9] MAJORITY-CARRIER CAMEL DIODE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 63 - 65