HETEROSTRUCTURES IN III-V-OPTOELECTRONIC DEVICES

被引：3

作者：

BAETS, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期

关键词：

D O I：

10.1016/0038-1101(87)90084-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1175 / 1182

页数：8

共 16 条

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[Anonymous], 1978, HETEROSTRUCTURE LASE

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[5]

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[7]

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HAYES, JR ;

CAPASSO, F ;

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MALIK, RJ ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1983, 19 (11) :410-411

[9] CONTINUOUS WAVE OPERATION (77-K) OF YELLOW (583.6 NM) EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER-DIODES [J].

HINO, I ;

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[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

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