HETEROJUNCTION INALAS/INP MESFETS GROWN BY OMVPE

[1] HIGH-QUALITY INALAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1637 - 1639

[2] MICROWAVE PERFORMANCE OF PULSE-DOPED-HETEROSTRUCTURE GAINAS MESFETS [J]. ELECTRONICS LETTERS, 1988, 24 (02) : 93 - 94

[3] FATHIMULLA A, 1987, OCT COMP SEM GROWTH

[4] INXAL1-XAS/INP HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS (HIGFETS) [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 53 - 54

[5] Itoh T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P771

[6] KAPOOR VK, 1980, P S DIELECTRIC FILMS, V863

[7] OHNO H, 1980, I PHY C SER, V56, P465

[1] HIGH-QUALITY INALAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1637 - 1639

[2] MICROWAVE PERFORMANCE OF PULSE-DOPED-HETEROSTRUCTURE GAINAS MESFETS [J]. ELECTRONICS LETTERS, 1988, 24 (02) : 93 - 94

[3] FATHIMULLA A, 1987, OCT COMP SEM GROWTH

[4] INXAL1-XAS/INP HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS (HIGFETS) [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 53 - 54

[5] Itoh T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P771

[6] KAPOOR VK, 1980, P S DIELECTRIC FILMS, V863

[7] OHNO H, 1980, I PHY C SER, V56, P465