HIGH-FIELD MAGNETORESISTANCE OF HOPPING TRANSPORT IN DISORDERED IMPURITY SYSTEM OF TRANSMUTATION-DOPED GE

被引:28
作者
KNOTEK, ML [1 ]
机构
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
来源
PHYSICAL REVIEW B | 1977年 / 16卷 / 06期
关键词
D O I
10.1103/PhysRevB.16.2629
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2629 / 2641
页数:13
相关论文
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