HIGH-FIELD MAGNETORESISTANCE OF HOPPING TRANSPORT IN DISORDERED IMPURITY SYSTEM OF TRANSMUTATION-DOPED GE

被引：28

作者：

KNOTEK, ML ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.16.2629

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2629 / 2641

页数：13

共 44 条

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