SEPARATE CONFINEMENT ELECTROABSORPTION MODULATOR FOR 633 NM LIGHT

被引:5
作者
HAASE, MA
MISEMER, DK
OLSEN, LC
VERNSTROM, GD
机构
[1] Photonics Research Laboratory, 3M Company, St. Paul
关键词
D O I
10.1063/1.107087
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel guided-wave electroabsorption modulator, based on separate confinement of the optical modes and the applied electric field, is described. When demonstrated for 633 nm light using AlGaAs waveguide technology, the concept provides low insertion loss and extinction ratios as great as 100:1 (20 dB) while operating at less than 10 V. Other advantages include polarization insensitivity and low capacitance.
引用
收藏
页码:2054 / 2056
页数:3
相关论文
共 12 条
[1]   OPTICAL-PROPERTIES OF ALXGA1-XAS [J].
ASPNES, DE ;
KELSO, SM ;
LOGAN, RA ;
BHAT, R .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767
[2]  
BOER KW, 1990, SURVEY SEMICONDUCTOR, P968
[3]   ELECTROABSORPTION IN GAAS QUANTUM-WELL WAVE-GUIDES [J].
DUTTA, NK ;
OLSSON, NA .
ELECTRONICS LETTERS, 1987, 23 (16) :853-854
[4]   GAINASP BURIED CHANNEL EA MODULATOR FOR 1.3MU-M FIBER LINKS [J].
LIN, SC ;
JING, XL ;
CHIN, MK ;
WALPITA, LM ;
YU, PKL ;
CHANG, WSC .
ELECTRONICS LETTERS, 1987, 23 (24) :1257-1259
[5]   HIGH-SPEED BULK INGAASP-INP ELECTROABSORPTION MODULATORS WITH BANDWIDTH IN EXCESS OF 20 GHZ [J].
MAK, G ;
ROLLAND, C ;
FOX, KE ;
BLAAUW, C .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (10) :730-733
[6]   HIGH-SPEED ELECTROABSORPTION MODULATOR WITH STRIP-LOADED GAINASP PLANAR WAVE-GUIDE [J].
NODA, Y ;
SUZUKI, M ;
KUSHIRO, Y ;
AKIBA, S .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (10) :1445-1453
[7]  
PANISH MB, 1978, HETEROSTRUCTURE LA A, P82
[8]   ELECTROABSORPTION IN ALYGA1-YAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURES [J].
REINHART, FK .
APPLIED PHYSICS LETTERS, 1973, 22 (08) :372-374
[9]  
Stillman G.E., 1977, SEMICONDUCTORS SEMIM, V12, P291
[10]   ELECTROABSORPTION IN GAAS AND ITS APPLICATION TO WAVEGUIDE DETECTORS AND MODULATORS [J].
STILLMAN, GE ;
WOLFE, CM ;
BOZLER, CO ;
ROSSI, JA .
APPLIED PHYSICS LETTERS, 1976, 28 (09) :544-547