共 20 条
THE EFFICIENCY OF PHOTO-LUMINESCENCE OF THIN EPITAXIAL SEMICONDUCTORS
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DUGGAN, G
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SCOTT, GB
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D O I:
10.1063/1.328464
中图分类号:
O59 [应用物理学];
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页码:407 / 411
页数:5
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共 20 条
[1]
ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
[J].
ACKET, GA
;
NIJMAN, W
;
LAM, HT
.
JOURNAL OF APPLIED PHYSICS,
1974, 45 (07)
:3033-3040

ACKET, GA
论文数: 0 引用数: 0
h-index: 0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

NIJMAN, W
论文数: 0 引用数: 0
h-index: 0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

LAM, HT
论文数: 0 引用数: 0
h-index: 0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
[2]
SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES
[J].
ASBECK, P
.
JOURNAL OF APPLIED PHYSICS,
1977, 48 (02)
:820-822

ASBECK, P
论文数: 0 引用数: 0
h-index: 0
机构:
PHILIPS LABS,BRIARCLIFF MANOR,NY 10510 PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
[3]
VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
[J].
CASEY, HC
;
MILLER, BI
;
PINKAS, E
.
JOURNAL OF APPLIED PHYSICS,
1973, 44 (03)
:1281-1287

CASEY, HC
论文数: 0 引用数: 0
h-index: 0
机构:
BELL LABS,MURRAY HILL,NJ 07974 BELL LABS,MURRAY HILL,NJ 07974

MILLER, BI
论文数: 0 引用数: 0
h-index: 0
机构:
BELL LABS,MURRAY HILL,NJ 07974 BELL LABS,MURRAY HILL,NJ 07974

PINKAS, E
论文数: 0 引用数: 0
h-index: 0
机构:
BELL LABS,MURRAY HILL,NJ 07974 BELL LABS,MURRAY HILL,NJ 07974
[4]
SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY
[J].
DEVORE, HB
.
PHYSICAL REVIEW,
1956, 102 (01)
:86-91

DEVORE, HB
论文数: 0 引用数: 0
h-index: 0
[5]
VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
DUPUIS, RD
;
DAPKUS, PD
.
APPLIED PHYSICS LETTERS,
1978, 32 (08)
:473-475

DUPUIS, RD
论文数: 0 引用数: 0
h-index: 0

DAPKUS, PD
论文数: 0 引用数: 0
h-index: 0
[6]
NONRADIATIVE LARGE DARK SPOTS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
[J].
HENRY, CH
;
LOGAN, RA
.
JOURNAL OF APPLIED PHYSICS,
1977, 48 (09)
:3962-3970

HENRY, CH
论文数: 0 引用数: 0
h-index: 0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974 BELL TEL LABS INC,MURRAY HILL,NJ 07974

LOGAN, RA
论文数: 0 引用数: 0
h-index: 0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974 BELL TEL LABS INC,MURRAY HILL,NJ 07974
[7]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
[J].
HWANG, CJ
.
JOURNAL OF APPLIED PHYSICS,
1969, 40 (09)
:3731-&

HWANG, CJ
论文数: 0 引用数: 0
h-index: 0
[8]
LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT
[J].
KRESSEL, H
;
ETTENBERG, M
.
JOURNAL OF APPLIED PHYSICS,
1976, 47 (08)
:3533-3537

KRESSEL, H
论文数: 0 引用数: 0
h-index: 0
机构:
RCA LABS,PRINCETON,NJ 08540 RCA LABS,PRINCETON,NJ 08540

ETTENBERG, M
论文数: 0 引用数: 0
h-index: 0
机构:
RCA LABS,PRINCETON,NJ 08540 RCA LABS,PRINCETON,NJ 08540
[9]
EFFECT OF PHOTON RECYCLING ON DIFFUSION LENGTH AND INTERNAL QUANTUM EFFICIENCY IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
[J].
KURIYAMA, T
;
KAMIYA, T
;
YANAI, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977, 16 (03)
:465-477

KURIYAMA, T
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, BUNKYO KU, TOKYO 113, JAPAN UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, BUNKYO KU, TOKYO 113, JAPAN

KAMIYA, T
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, BUNKYO KU, TOKYO 113, JAPAN UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, BUNKYO KU, TOKYO 113, JAPAN

YANAI, H
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, BUNKYO KU, TOKYO 113, JAPAN UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, BUNKYO KU, TOKYO 113, JAPAN
[10]
ELECTRICAL CHARACTERIZATION OF SEMI-INSULATING GAAS - CORRELATION WITH MASS-SPECTROGRAPHIC ANALYSIS
[J].
LOOK, DC
.
JOURNAL OF APPLIED PHYSICS,
1977, 48 (12)
:5141-5148

LOOK, DC
论文数: 0 引用数: 0
h-index: 0