A HIGH VOLTAGE-GAIN GAAS VERTICAL FIELD-EFFECT TRANSISTOR WITH AN INGAAS/GAAS PLANAR-DOPED BARRIER LAUNCHER

被引：5

作者：

WON, YH ^{[1
]}

YAMASAKI, K ^{[1
]}

DANIELSRACE, T ^{[1
]}

TASKER, PJ ^{[1
]}

SCHAFF, WJ ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 09期

关键词：

D O I：

10.1109/55.62961

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high voltage-gain GaAs vertical field-effect transistor (VFET) with an InGaAs/GaAs pseudomorphic planar-doped harrier (PDB) launcher has been demonstrated. The pseudomorphic structure which includes a small amount of indium in the launcher was grown by molecular beam epitaxy (MBE). Fabricated transistors, with good pinch-off characteristics (gate threshold voltage (Vth)= −1.6 V), have exhibited dc open-drain voltage gains up to 50 at 77 K. This high voltage gain results from the combination of high transconductances and low output conductances. The former is attributed to velocity enhancement by hot-electron injection. The latter is, in turn, attributed to the suppression of electron spillover by energy band discontinuity at the heterointerface between the launcher and the channel. © 1990 IEEE

引用

页码：376 / 378

页数：3

共 6 条

[1]

EASTMAN LF, I PHYS C SER, V63, P245

[2]

EASTMAN LF, 1981, INT S GAAS RELATED C

[3] SIMULATION OF GAAS SUB-MICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE [J].