ELECTRON VELOCITY ENHANCEMENT BY PLANAR-DOPED BARRIER SOURCE IN GAAS VERTICAL FET

被引：6

作者：

YAMASAKI, K

DANIELSRACE, T

WENDT, JR

SCHAFF, WJ

TASKER, PJ

EASTMAN, LF

机构：

[1] Cornell Univ, United States

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 22期

关键词：

Barrier Source - Electron Velocity - Hot-Electron Injection - Mean Free Path - Transconductance - Vertical FET;

D O I：

10.1049/el:19880946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Edited Abstract)

引用

页码：1383 / 1384

页数：2

共 7 条

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[2]

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[5] VERTICAL ELECTRON TRANSISTOR (VET) IN GAAS WITH A HETEROJUNCTION (ALGAAS-GAAS) CATHODE [J].

MISHRA, U ;

MAKI, PA ;

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EASTMAN, LF .

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[6]

Mishra U., 1982, International Electron Devices Meeting. Technical Digest, P594

[7] SIMULATION OF GAAS SUB-MICRON FET WITH HOT-ELECTRON INJECTION STRUCTURE [J].

TOMIZAWA, K ;

AWANO, Y ;

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KAWASHIMA, M .

ELECTRONICS LETTERS, 1983, 19 (17) :697-698

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