IMPLANTED CARBON - AN EFFECTIVE ETCH-STOP IN SILICON

被引：12

作者：

LEHMANN, V ^{[1
]}

MITANI, K ^{[1
]}

FEIJOO, D ^{[1
]}

GOSELE, U ^{[1
]}

机构：

[1] DUKE UNIV,SCH ENGN,DURHAM,NC 27706

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 05期

关键词：

D O I：

10.1149/1.2085826

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Etch-rate measurements in KOH and ethylene diamine pyrocatechol (EDP) solutions have been made with carbon implanted silicon samples. It is shown that an implanted carbon layer is an effective etch-stop in silicon and allows the production of silicon-on-insulator (SOI) layers thinner than 0.1-mu-m with a single etch-stop layer.

引用

页码：L3 / L4

页数：2

共 10 条

[1]

BOGH A, 1971, J ELECTROCHEM SOC, V118, P401

[2]

CHEVACHAROENKUL S, IN PRESS APPL PHYS L

[3]

FEIJOO D, UNPUB

[4] SEMICONDUCTOR WAFER BONDING [J].

LEHMANN, V ;

ONG, IWK ;

GOSELE, U ;

STENGL, R ;

MITANI, K .

ADVANCED MATERIALS, 1990, 2 (08) :372-374

[5] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR [J].

MASZARA, WP ;

GOETZ, G ;

CAVIGLIA, A ;

MCKITTERICK, JB .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :4943-4950

[6] SILICON-ON-INSULATOR BY WAFER BONDING - A REVIEW [J].

MASZARA, WP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) :341-347

[7]

Price J. B., 1973, SEMICONDUCTOR SILICO, P339

[8]

SODERBARG A, 1989, IEEE SOS SOI TECHNOL, P64

[9] BUBBLE-FREE SILICON-WAFER BONDING IN A NON-CLEANROOM ENVIRONMENT [J].

STENGL, R ;

AHN, KY ;

GOSELE, U .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2364-L2366

[10] CROSS-SECTION TRANSMISSION ELECTRON-MICROSCOPY STUDY OF CARBON-IMPLANTED LAYERS IN SILICON [J].

WONG, H ;

LOU, J ;

CHEUNG, NW ;

KVAM, EP ;

YU, KM ;

OLSON, DA ;

WASHBURN, J .

APPLIED PHYSICS LETTERS, 1990, 57 (08) :798-800

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