EFFECT OF GROWTH INTERRUPTIONS ON ULTRA-THIN INAS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：6

作者：

CARLIN, JF

RUDRA, A

HOUDRE, R

RUTERANA, P

ILEGEMS, M

机构：

[1] Institute for Micro- and Optoelectronics, Department of Physics, Ecole Polytechnique Fédérale de Lausanne

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90381-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron microscopy (TEM).

引用

页码：155 / 156

页数：2

共 5 条

[1] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME
BERGER, PR
CHANG, K
BHATTACHARYA, P
SINGH, J
BAJAJ, KK
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 684 - 686
[2] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES
GOLDSTEIN, L
HORIKOSHI, Y
TARUCHA, S
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1489 - 1492
[3] INAS/INP STRAINED SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
SCHNEIDER, RP
WESSELS, BW
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (19) : 1998 - 2000
[4] OPTICAL-PROPERTIES OF INAS/INP STRAINED SINGLE QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
SCHNEIDER, RP
WESSELS, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 405 - 408
[5] OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES
WEISBUCH, C
DINGLE, R
GOSSARD, AC
WIEGMANN, W
[J]. SOLID STATE COMMUNICATIONS, 1981, 38 (08) : 709 - 712

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