NEW INGAASP-INP DUAL-WAVELENGTH LED

被引：15

作者：

SAKAI, S ^{[1
]}

AOKI, T ^{[1
]}

AMEMIYA, Y ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,NAGOYA,AICHI 466,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new dual-wavelength light-emitting diode (LED) emitting near 1.2 and 1.3 μm has been fabricated. The differential efficiencies of the two outputs were 0.36 and 0.88%, respectively. The intensities of these optical outputs can be controlled independently. The optical cross talk between the two wavelengths was -10 and -16 dB at 1.15 and 1.35 μm, respectively. This device is useful for wavelength-multiplexed optical communication systems.

引用

页码：588 / 589

页数：2

共 8 条

[1] DUAL-WAVELENGTH DEMULTIPLEXING INGAASP PHOTO-DIODE
CAMPBELL, JC
LEE, TP
DENTAI, AG
BURRUS, CA
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (06) : 401 - 402
[2] LEE TP, 1979, IEEE J QUANTUM ELECT, V15, P30
[3] 2-COLOR DETECTOR ARRAYS BY PBTE-PBO.8SNO.2TE LIQUID-PHASE EPITAXY
LOCKWOOD, AH
BALON, JR
CHIA, PS
RENDA, FJ
[J]. INFRARED PHYSICS, 1976, 16 (05): : 509 - 514
[4] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES
NAKAJIMA, K
KUSUNOKI, T
AKITA, K
KOTANI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 123 - 127
[5] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M
POLLACK, MA
NAHORY, RE
DEWINTER, JC
BALLMAN, AA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 314 - 316
[6] INGAASP-INP DOUBLE-HETEROSTRUCTURE PHOTO-DIODES
SAKAI, S
UMENO, M
AMEMIYA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) : 1701 - 1702
[7] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES
YAMAMOTO, T
SAKAI, K
AKIBA, S
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 95 - 98
[8] LONG-WAVELENGTH INGAASP AVALANCHE PHOTO-DIODES
YEATS, R
CHIAO, SH
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 581 - 583

← 1 →