SPECTRAL RESPONSE OF P-N HETEROJUNCTIONS

[1] ALFEROV ZI, 1965, FIZ TVERD TELA+, V7, P990

[2] PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 174 - &

[3] FISHER CA, TO BE PUBLISHED

[4] GUTKIN AA, 1962, FIZ TVERD TELA, V4, P1360

[5] KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V34, P1138

[6] CONTOUR DEPOSITION - A NEW EPITAXIAL DEPOSITION TECHNIQUE FOR SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 959 - &

[7] PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (09) : 695 - 700

[8] DETERMINATION OF OPTICAL ABSORPTION USING HETEROCRYSTALS [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : K79 - &

[9] SPECTRAL CHARACTERISTIC EFFICIENCY + SPEED OF GAASXP1-X GAAS PHOTODIODE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (11) : 1358 - &

[10] FORWARD BIAS CURRENT-VOLTAGE CHARACTERISTICS FOR A HETEROJUNCTION IN WHICH TUNNELLING DOMINATES [J]. PHYSICA STATUS SOLIDI, 1966, 18 (01): : 105 - &

[1] ALFEROV ZI, 1965, FIZ TVERD TELA+, V7, P990

[2] PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 174 - &

[3] FISHER CA, TO BE PUBLISHED

[4] GUTKIN AA, 1962, FIZ TVERD TELA, V4, P1360

[5] KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V34, P1138

[6] CONTOUR DEPOSITION - A NEW EPITAXIAL DEPOSITION TECHNIQUE FOR SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 959 - &

[7] PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (09) : 695 - 700

[8] DETERMINATION OF OPTICAL ABSORPTION USING HETEROCRYSTALS [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : K79 - &

[9] SPECTRAL CHARACTERISTIC EFFICIENCY + SPEED OF GAASXP1-X GAAS PHOTODIODE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (11) : 1358 - &

[10] FORWARD BIAS CURRENT-VOLTAGE CHARACTERISTICS FOR A HETEROJUNCTION IN WHICH TUNNELLING DOMINATES [J]. PHYSICA STATUS SOLIDI, 1966, 18 (01): : 105 - &