DEPTH PROFILE MEASUREMENTS OF ALUMINUM FILM ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON LAYERS BY AUGER-ELECTRON SPECTROSCOPY

被引：15

作者：

ISHIHARA, SI

HIRAO, T

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(87)90077-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：325 / 329

页数：5

共 5 条

HASEGAWA, S ;

SHIMIZU, S ;

KURATA, Y .

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ISHIHARA, S ;

HIRAO, T ;

MORI, K ;

KITAGAWA, M ;

OHNO, M ;

KOHIKI, S .

[3] THERMAL DEHYDROGENATION OF POLYSILANE [J].

JOHN, P ;

COWIE, BC ;

ODEH, IM .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (06) :559-564

[4] RECENT APPLIED DEVELOPMENTS IN THE AMORPHOUS-SILICON FIELD [J].

SPEAR, WE ;

LECOMBER, PG ;

SNELL, AJ ;

GIBSON, RA .

[5]

SZE SM, 1985, SEMICONDUCTOR DEVICE, P362