STRUCTURE AND STABILITY OF PASSIVATING ARSENIC SULFIDE PHASES ON GAAS-SURFACES

被引：139

作者：

SANDROFF, CJ

HEGDE, MS

CHANG, CC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：841 / 844

页数：4

共 27 条

[21] ELECTRONIC PASSIVATION OF GAAS-SURFACES THROUGH THE FORMATION OF ARSENIC SULFUR BONDS [J].

SANDROFF, CJ ;

HEGDE, MS ;

FARROW, LA ;

CHANG, CC ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :362-364

[22] SURFACE-ENHANCED RAMAN-STUDY OF ORGANIC SULFIDES ADSORBED ON SILVER - FACILE CLEAVAGE OF S-S-BOND AND C-S-BOND [J].

SANDROFF, CJ ;

HERSCHBACH, DR .

JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (17) :3277-3279

[23] EFFECTS OF PASSIVATING IONIC FILMS ON THE PHOTOLUMINESCENCE PROPERTIES OF GAAS [J].

SKROMME, BJ ;

SANDROFF, CJ ;

YABLONOVITCH, E ;

GMITTER, T .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2022-2024

[24] UV PHOTOEMISSION-STUDY OF SULFIDE PASSIVATED GAAS-SURFACES [J].

TIEDJE, T ;

WONG, PC ;

MITCHELL, KAR ;

EBERHARDT, W ;

FU, ZG ;

SONDERICKER, D .

SOLID STATE COMMUNICATIONS, 1989, 70 (03) :355-358

[25] CHARACTERIZATION OF PHOTOCHEMICALLY UNPINNED GAAS [J].

WILMSEN, CW ;

KIRCHNER, PD ;

BAKER, JM ;

MCINTURFF, DT ;

PETTIT, GD ;

WOODALL, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1180-1183

[26] EFFECTS OF N-2, O-2, AND H2O ON GAAS PASSIVATED BY PHOTOWASHING OR COATING WITH NA2S.9H2O [J].

WILMSEN, CW ;

KIRCHNER, PD ;

WOODALL, JM .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :3287-3289

[27] NEARLY IDEAL ELECTRONIC-PROPERTIES OF SULFIDE COATED GAAS-SURFACES [J].

YABLONOVITCH, E ;

SANDROFF, CJ ;

BHAT, R ;

GMITTER, T .

APPLIED PHYSICS LETTERS, 1987, 51 (06) :439-441

← 1 2 3 →