STRUCTURE AND STABILITY OF PASSIVATING ARSENIC SULFIDE PHASES ON GAAS-SURFACES

被引：139

作者：

SANDROFF, CJ

HEGDE, MS

CHANG, CC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：841 / 844

页数：4

共 27 条

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APPLIED PHYSICS LETTERS, 1989, 54 (08) :724-726

[15] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF GAAS SURFACE-STATES TREATED WITH INORGANIC SULFIDES [J].

LIU, D ;

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APPLIED PHYSICS LETTERS, 1988, 53 (12) :1059-1061

[16] STUDY OF NOVEL CHEMICAL SURFACE PASSIVATION TECHNIQUES ON GAAS PN JUNCTION SOLAR-CELLS [J].

MAUK, MG ;

XU, S ;

ARENT, DJ ;

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APPLIED PHYSICS LETTERS, 1989, 54 (03) :213-215

[17]

NANNICHI Y, IN PRESS JPN J APPL

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NOTTENBURG, RN ;

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APPLIED PHYSICS LETTERS, 1988, 52 (03) :218-220

[19] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

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PETTIT, GD .

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[20] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

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APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

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