DEFECTS WITH DEEP LEVELS IN GAAS INDUCED BY PLASTIC-DEFORMATION AND ELECTRON-IRRADIATION

被引：12

作者：

HAGA, T

SUEZAWA, M

SUMINO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.1929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1929 / 1936

页数：8

共 24 条

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[7] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

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GATOS, HC .

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