PHOTO-CONTRACTION EFFECT IN AMORPHOUS SE1-XGEX FILMS

被引：61

作者：

SINGH, B

RAJAGOPALAN, S

BHAT, PK

PANDYA, DK

CHOPRA, KL

机构：

[1] Department of Physics, Indian Institute of Technology Delhi, New Delhi

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 03期

关键词：

D O I：

10.1016/0038-1098(79)91031-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Anomalously large (∼ 12%) photocontraction (photoinduced change in thickness) has been observed in amorphous Se1-xGex films. The contraction depends strongly on the angle of deposition and post-deposition treatment of the films. © 1979.

引用

页码：167 / 169

页数：3

共 14 条

[1] BISHOP SG, 1977, PHYS REV B, V15, P2218
[2] CHOPRA KL, 1975, J APPL PHYS, V46, P2966
[3] DENEUFVILLE JP, 1974, J NONCRYST SOLIDS, V13, P191
[4] DENEUFVILLE JP, 1975, OPTICAL PROPERTIES S, P439
[5] COLUMNAR MICROSTRUCTURE IN VAPOR-DEPOSITED THIN-FILMS
DIRKS, AG
LEAMY, HJ
[J]. THIN SOLID FILMS, 1977, 47 (03) : 219 - 233
[6] KINETICS OF PHOTODISSOLUTION OF SILVER IN AMORPHOUS AS2S3 FILMS
GOLDSCHMIDT, D
BERNSTEIN, T
RUDMAN, PS
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 283 - 287
[7] REVERSIBLE PHOTO-STRUCTURAL CHANGE IN MELT-QUENCHED AS2S3 GLASS
HAMANAKA, H
TANAKA, K
IIZIMA, S
[J]. SOLID STATE COMMUNICATIONS, 1977, 23 (01) : 63 - 65
[8] Kolomiets B. T., 1976, Soviet Physics - Solid State, V18, P686
[9] NEW APPLICATION OF SE-GE GLASSES TO SILICON MICROFABRICATION TECHNOLOGY
NAGAI, H
YOSHIKAWA, A
TOYOSHIMA, Y
OCHI, O
MIZUSHIMA, Y
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 145 - 147
[10] RAJAGOPALAN S, 1979, J APPL PHYS APR

← 1 2 →