NONUNIFORM LATERAL IONIC IMPURITY DISTRIBUTIONS AT SI-SIO2 INTERFACES

被引:27
作者
SILVERSMITH, DJ
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D O I
10.1149/1.2404048
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1589 / +
页数:1
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共 14 条
[1]  
BOULINDM, TO BE PUBLISHED
[2]   APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE [J].
CASTAGNE, R ;
VAPAILLE, A .
ELECTRONICS LETTERS, 1970, 6 (22) :691-+
[3]  
CASTAGNE R, 1970, CR ACAD SCI B PHYS, V270, P1347
[4]   LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].
CASTRO, PL ;
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+
[5]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[7]  
GOETZBERGER A, 1967, J APPL PHYS, V38, P4852
[8]   SILICON-SILICON DIOXIDE SYSTEM [J].
GRAY, PV .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1543-+
[9]  
KOOI E, 1966, PHILIPS RES REP, V21, P477
[10]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
KUHN, M .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+