EFFECT OF DISORDER ON THE HYDROGEN CONTENT IN SI

被引：10

作者：

PEERCY, PS

STEIN, HJ

GINLEY, DS

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.91621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：678 / 680

页数：3

共 14 条

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[6]

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[8] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE [J].

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