MOLTEN DIFFUSED SILICON TRANSISTORS

[1] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[2] CORNLISON B, 1957, I RADIO ENG WESCON 3, P22

[3] HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 522 - 523

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] HYDE FJ, 1959, P I ELECT ENGRS B, V106, P397

[6] EFFECT OF BASE-CONTACT OVERLAP AND PARASITIC CAPACITIES ON SMALL-SIGNAL PARAMETERS OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (01): : 38 - 40

[7] PRITCHARD RL, 1958, P IRE, V46, P46

[8] RESISTIVITY STRIATIONS IN GERMANIUM SINGLE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (01) : 61 - &

[1] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[2] CORNLISON B, 1957, I RADIO ENG WESCON 3, P22

[3] HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 522 - 523

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] HYDE FJ, 1959, P I ELECT ENGRS B, V106, P397

[6] EFFECT OF BASE-CONTACT OVERLAP AND PARASITIC CAPACITIES ON SMALL-SIGNAL PARAMETERS OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (01): : 38 - 40

[7] PRITCHARD RL, 1958, P IRE, V46, P46

[8] RESISTIVITY STRIATIONS IN GERMANIUM SINGLE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (01) : 61 - &