ADSORPTION OF BI ON SI(001) SURFACE - AN ATOMIC VIEW

被引：25

作者：

NOH, HP ^{[1
]}

PARK, C ^{[1
]}

JEON, D ^{[1
]}

CHO, K ^{[1
]}

HASHIZUME, T ^{[1
]}

KUK, Y ^{[1
]}

SAKURAI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Coverage dependent adsorption of Bi on Si(001) has been studied using scanning tunneling microscope and low-energy electron diffraction. At low coverages, Bi atom adsorbs without breaking the Si(001)-(2X1) structure. At the coverage of approximately 0.5 ML, Bi atoms begin to sit on the troughs between the Si dimer row and form a Bi (1X2) structure with broken Si dimers. Strain due to the large misfit is relieved by the formation of antiphase boundaries and Bi missing line defects.

引用

页码：2097 / 2099

页数：3