NATURE OF SECONDARY DEFECTS IN SILICON PRODUCED BY HIGH-TEMPERATURE ELECTRON-IRRADIATION

被引：9

作者：

FURUNO, S

IZUI, K

OTSU, H

机构：

来源：

关键词：

D O I：

10.1143/JJAP.18.203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：203 / 204

页数：2

共 8 条

[1]

Foll H., 1975, Lattice Defects in Semiconductors, 1974, P233

[2]

HIRSCH PB, 1965, ELECTRON MICROSCOPY, P226

[3]

MADDEN PK, 1972, RADIAT EFF, V14, P271

MATTHEWS, MD ;

ASHBY, SJ .

PHILOSOPHICAL MAGAZINE, 1973, 27 (06) :1313-1322

NES, E ;

WASHBURN, J .

[6]

SESHAN K, 1972, RADIAT EFF, V14, P267

[7] ELECTRON MICROSCOPY AT HIGH VOLTAGES [J].

THOMAS, G .

PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1097-&

[8] SHRINKAGE OF ROD-SHAPED DEFECTS IN BORON-ION-IMPLANTED SILICON [J].

WU, WK ;

WASHBURN, J .