CARRIER MOBILITY AND FIELD-EFFECT IN THIN INDIUM-ANTIMONIDE FILMS

被引：57

作者：

LING, CH ^{[1
]}

FISHER, JH ^{[1
]}

ANDERSON, JC ^{[1
]}

机构：

[1] IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7,ENGLAND

来源：

关键词：

D O I：

10.1016/0040-6090(72)90428-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：267 / 288

页数：22

共 22 条

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[13] Many A., 1965, SEMICONDUCTOR SURFAC
[14] MATARE HF, 1971, DEFECT ELECTRONICS S
[15] PAGNIA H, 1963, Z ANGEW PHYS, V16, P209
[16] POTTER RF, 1963, SOLID STATE ELECTRON, V7, P253
[17] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS
SCHRIEFFER, JR
[J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646
[18] Sondheimer E. H., 1952, PHIL MAG S, V1, P1
[19] HALL MOBILITY OF ELECTRONS IN SPACE-CHARGE LAYER OF THIN FILM CDSE TRANSISTORS
VANHEEK, HF
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (04) : 459 - &
[20] ELECTRON MOBILITY STUDIES IN SURFACE SPACE-CHARGE LAYERS IN VAPOR-DEPOSITED CDS FILMS
WAXMAN, A
HENRICH, VE
SHALLCROSS, FV
BORKAN, H
WEIMER, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 168 - +