4-6 NARROW GAP SEMICONDUCTORS AND DEVICES

被引：5

作者：

HESSE, J ^{[1
]}

机构：

[1] AEG TELEFUNKEN,FORSCHUNGSINST,FRANKFURT,FED REP GER

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：297 / 304

页数：8

共 69 条

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