IMPACT IONIZATION OF DEEP IMPURITIES (IN, NI, AU) IN SILICON

被引：15

作者：

MCCOMBS, AE

MILNES, AG

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1972年 / 32卷 / 04期

关键词：

D O I：

10.1080/00207217208938299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：361 / &

共 21 条

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