INTERACTION OF HYDROGENATED SILICON-NITRIDE FILMS WITH INDIUM TIN OXIDE

被引：5

作者：

KIMURA, E

KAWACHI, G

KONISHI, N

MATSUKAWA, Y

SASANO, A

机构：

[1] HITACHI LTD,MOBARA WORKS,MOBARA,CHIBA 297,JAPAN

[2] HITACHI DEVICE ENGN CO LTD,MUSASHINO OFF,OHME,TOKYO 198,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11A期

关键词：

HYDROGENATED SILICON NITRIDE (SINX-H); INDIUM TIN OXIDE (ITO); WHITENING; PLASMA; CVD; OES; XPS;

D O I：

10.1143/JJAP.32.5072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The whitening mechanism of hydrogenated silicon nitride (SiN(x):H) film deposited on indium tin oxide (ITO) film was investigated by means of optical emission spectroscopy (OES), scanning electron microscopy (SEM) and X-ray photoelectron spectrosscopy (XPS) analysis. The degree of whitening of the SiN(x):H film on ITO depends on the deposition conditions of SiN(x):H, i.e., the SiH4 flow rate and the substrate temperature. Reactive species such as SiH(n), decomposed from SiH4 gas, preferentially caused the reduction of ITO. This was followed by formation of In metal and a Si-rich porous layer containing SiO2. An abnormal growth of SiN(x):H films caused by these successive reactions led to the whitening.

引用

页码：5072 / 5075

页数：4

共 8 条

[1]

Briggs D., 1990, PRACTICAL SURFACE AN, V1, P595

[2] SILICON-NITRIDE AMORPHOUS-SILICON INTERFACES IN AN MIS JUNCTION [J].