ELECTROCHEMICAL PROFILING OF ION-IMPLANTED INP

被引：3

作者：

BAHIR, G ^{[1
]}

MERZ, JL ^{[1
]}

ABELSON, JR ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期

关键词：

D O I：

10.1149/1.2100849

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2187 / 2193

页数：7

共 16 条

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[3]

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[4]

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[7]

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[8] ELECTROLYTIC DECOMPOSITION AND PHOTO-DECOMPOSITION OF COMPOUND SEMICONDUCTORS IN CONTACT WITH ELECTROLYTES [J].

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[9] CHARACTERIZATION OF ION-IMPLANTED SILICON BY ELECTROLYTIC REVERSE CURRENT [J].

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[10]

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