DEUTERON CHANNELING FOR DEFECT ANALYSIS OF SILICON-CARBIDE

被引：20

作者：

NASHIYAMA, I

NISHIJIMA, T

SAKUMA, E

YOSHIDA, S

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 33卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(88)90639-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：599 / 602

页数：4

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