EFFECTS OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL-PROPERTIES OF CDTE(111) GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(100)

被引：38

作者：

RENO, JL ^{[1
]}

GOURLEY, PL ^{[1
]}

MONFROY, G ^{[1
]}

FAURIE, JP ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 18期

关键词：

D O I：

10.1063/1.99777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1747 / 1749

页数：3

共 10 条

[1]

AULEYTNER J, 1967, XRAY METHODS STUDY S, P152

[2] CDTE-GAAS(100) INTERFACE - MBE GROWTH, RHEED AND XPS CHARACTERIZATION [J].

FAURIE, JP ;

HSU, C ;

SIVANANTHAN, S ;

CHU, X .

SURFACE SCIENCE, 1986, 168 (1-3) :473-482

[3]

FAURIE JP, 1988, UNPUB APR DARPA IR F

[4] THE ESTIMATION OF DISLOCATION DENSITIES IN METALS FROM X-RAY DATA [J].

GAY, P ;

HIRSCH, PB ;

KELLY, A .

ACTA METALLURGICA, 1953, 1 (03) :315-319

[5] PHOTOLUMINESCENCE MICROSCOPY OF EPITAXIAL GAAS ON SI [J].

GOURLEY, PL ;

LONGERBONE, M ;

ZHANG, SL ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :599-601

[6] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES [J].

GOURLEY, PL ;

BIEFELD, RM ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :482-484

[7]

GOURLEY PL, 1986, MATER RES SOC S P, V56, P229

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF 2-IN-DIAM HG1-XCDXTE FILMS ON GAAS (100) SUBSTRATES [J].

LANGE, MD ;

SIVANANTHAN, S ;

CHU, X ;

FAURIE, JP .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :978-980

[9] EFFECTS OF SUBSTRATE MISORIENTATION ON THE PROPERTIES OF (AL, GA)AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSUI, RK ;

CURLESS, JA ;

KRAMER, GD ;

PEFFLEY, MS ;

RODE, DL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2570-2572

[10]

WEERTMAN J, 1964, ELEMENTARY DISLOCATI, P90

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