INTERFACE ROUGHNESS AND CHARGE CARRIER RECOMBINATION LIFETIMES IN GAINAS/INP QUANTUM WELLS GROWN BY LP-MOVPE

被引：26

作者：

ENGEL, M

BAUER, RK

BIMBERG, D

GRUTZMACHER, D

JURGENSEN, H

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

[2] AIXTRON GMBH,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90553-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

14

引用

收藏

页码：359 / 364

页数：6

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