ELECTROPHOTOGRAPHIC STUDIES OF GLOW-DISCHARGE AMORPHOUS-SILICON

被引：21

作者：

ODA, S ^{[1
]}

SAITO, Y ^{[1
]}

SHIMIZU, I ^{[1
]}

INOUE, E ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,ENGN LAB,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 06期

关键词：

D O I：

10.1080/01418638108222575

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1079 / 1089

页数：11

共 20 条

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[2]

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DAVIS, EA ;

MOTT, NF .

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[5] PHOTOCONDUCTIVE IMAGING USING HYDROGENATED AMORPHOUS SILICON FILM [J].

IMAMURA, Y ;

ATAKA, S ;

TAKASAKI, Y ;

KUSANO, C ;

HIRAI, T ;

MARUYAMA, E .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :349-351

[6] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].

LECOMBER, PG ;

SPEAR, WE ;

GHAITH, A .

ELECTRONICS LETTERS, 1979, 15 (06) :179-181

[7]

LI HT, 1963, J APPL PHYS, V34, P1730

[8]

MORT J, 1980, PHOTOGR SCI ENG, V24, P241

[9]

MORT J, 1975, APPLIED SOLID STATE, V5, P69

[10]

Mott NF., 1979, ELECT PROCESSES NONC, P220

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