PHOTOVOLTAIC EFFECTS IN LATERALLY ILLUMINATED P-N-JUNCTIONS

被引：4

作者：

CONSTANTINESCU, C

GOLDENBLUM, A

SOSTARICH, M

机构：

[1] INST PHYS, BUCHAREST, ROMANIA

[2] UNIV BUCHAREST, FAC PHYS, BUCHAREST, ROMANIA

来源：

关键词：

D O I：

10.1080/00207217308938517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：65 / 72

页数：8

共 7 条

[1] SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY [J].

DEVORE, HB .

PHYSICAL REVIEW, 1956, 102 (01) :86-91

[2] DOPING DEPENDENCE OF HOLE LIFETIME IN TYPE GAAS [J].

HWANG, CJ .

[3]

JOHNSON EO, 1957, RCA REV, V18, P556

[4] PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS [J].

LOPEZ, A ;

ANDERSON, RL .

[5] INFRARED ABSORPTION IN GALLIUM ARSENIDE [J].

MOSS, TS ;

HAWKINS, TDF .

INFRARED PHYSICS, 1961, 1 (02) :111-115

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[7] SPECTRAL RESPONSE OF P-N HETEROJUNCTIONS [J].

TANSLEY, TL .

PHYSICA STATUS SOLIDI, 1967, 23 (01) :241-+