Formation of hydrogen-oxygen-vacancy complexes in silicon

被引：9

作者：

Hatakeyama, H ^{[1
]}

Suezawa, M ^{[1
]}

Markevich, VP ^{[1
]}

Sumino, K ^{[1
]}

机构：

[1] BYELARUSSIAN ACAD SCI, INST SOLID STATE PHYS & SEMICOND PHYS, MINSK 220072, BELARUS

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-2卷

关键词：

hydrogen; oxygen; vacancy; shallow donor; silicon;

D O I：

10.4028/www.scientific.net/MSF.196-201.939

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogen-oxygen-vacancy complexes in crystalline silicon were studied by means of optical absorption measurement. Hydrogen atoms were introduced in Czochralski-grown Si specimens by annealing at high temperature in H-2 atmosphere. After electron irradiation (dose: 1 x 10(16) cm(-2)), three new series of optical absorption lines in the range 180 similar to 350 cm(-1) were successively developed and annihilated upon 250 similar to 600 degrees C isochronal annealing. They were attributed to electronic transition of three kinds of shallow donors (D1, D2 and D3) which contained hydrogen, oxygen and vacancy. Generation process of D1 which formed firstly among them was investigated by isothermal annealing. The activation energy for D1 generation was determined to be 1.68 eV. From the study of annealing behavior of radiation-induced-defects, vacancy-oxygen pair (VO) probably plays an important role on D1 generation process.

引用

页码：939 / 944

页数：6

共 6 条

[1]

BINNS MJ, 1994, MATER SCI FORUM, V143-, P861, DOI 10.4028/www.scientific.net/MSF.143-147.861

[2] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[3]

KAMIURA Y, 1993, DEFECT DIFFUS FORUM, V95, P1001

[4] RADIATION-INDUCED SHALLOW DONORS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS SATURATED WITH HYDROGEN [J].

MARKEVICH, VP ;

SUEZAWA, M ;

SUMINO, K ;

MURIN, LI .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) :7347-7350

[5] HYDROGEN DIFFUSION AND THE CATALYSIS OF ENHANCED OXYGEN DIFFUSION IN SILICON AT TEMPERATURES BELOW 500-DEGREES-C [J].

NEWMAN, RC ;

TUCKER, JH ;

BROWN, AR ;

MCQUAID, SA .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :3061-3070

[6] KINETIC-STUDY OF THE 830-CM(-1) AND 889-CM(-1) INFRARED BANDS DURING ANNEALING OF IRRADIATED SILICON [J].

SVENSSON, BG ;

LINDSTROM, JL .

PHYSICAL REVIEW B, 1986, 34 (12) :8709-8717

← 1 →