KINETIC-STUDY OF THE 830-CM(-1) AND 889-CM(-1) INFRARED BANDS DURING ANNEALING OF IRRADIATED SILICON

被引：90

作者：

SVENSSON, BG

LINDSTROM, JL

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.8709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8709 / 8717

页数：9

共 26 条

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