ION INDUCED CARBON CONTAMINATION AND RECOIL IMPLANTATION

[1] ROLE OF RADIATION-DAMAGE ON CURRENT-VOLTAGE CHARACTERISTICS OF P-N-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 689 - 698

[2] FORMATION OF THIN POLYMER FILMS BY ELECTRON BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1680 - 1683

[3] GROTZSCHEL R, UNPUBLISHED

[4] CARBIDE CONTAMINATION OF SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1208 - +

[5] Kanaya K., 1964, OPTIK, V21, P399

[6] KUNZE D, 1967, Z ANGEW PHYSIK, V22, P69

[7] ELECTRON VOLTAIC STUDY OF ELECTRON BOMBARDMENT DAMAGE AND ITS THRESHOLDS IN GE AND SI [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1861 - 1863

[8] LOFERSKI JJ, 1955, PHYS REV, V100, P1261

[9] MOLLENSTEDT G, 1961, Z ANGEW PHYS, V13, P231

[10] NAEHRING FK, 1975, OCT P INT C ION IMPL, P614

[1] ROLE OF RADIATION-DAMAGE ON CURRENT-VOLTAGE CHARACTERISTICS OF P-N-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 689 - 698

[2] FORMATION OF THIN POLYMER FILMS BY ELECTRON BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1680 - 1683

[3] GROTZSCHEL R, UNPUBLISHED

[4] CARBIDE CONTAMINATION OF SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1208 - +

[5] Kanaya K., 1964, OPTIK, V21, P399

[6] KUNZE D, 1967, Z ANGEW PHYSIK, V22, P69

[7] ELECTRON VOLTAIC STUDY OF ELECTRON BOMBARDMENT DAMAGE AND ITS THRESHOLDS IN GE AND SI [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1861 - 1863

[8] LOFERSKI JJ, 1955, PHYS REV, V100, P1261

[9] MOLLENSTEDT G, 1961, Z ANGEW PHYS, V13, P231

[10] NAEHRING FK, 1975, OCT P INT C ION IMPL, P614